Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
نویسندگان
چکیده
We studied the influence of focused ion beam milling ridge waveguides on lasing parameters edge-emitting lasers, based a separate confinement double heterostructure. It is shown that there are three degrees influence, according to etching depth: modification waveguide properties only, decrease in efficiency without changing threshold current, and simultaneous deterioration current with significant optical characteristics laser. Keywords: beam, semiconductor laser, waveguide, single mode lasing.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2022
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2022.15.54275.18980